The Resource 2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors : 13-15 January, 2010, St William's College, York, UK, (electronic resource)

2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors : 13-15 January, 2010, St William's College, York, UK, (electronic resource)

Label
2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors : 13-15 January, 2010, St William's College, York, UK
Title
2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors
Title remainder
13-15 January, 2010, St William's College, York, UK
Creator
Subject
Genre
Language
eng
Member of
Cataloging source
MUU
Illustrations
illustrations
Index
no index present
Literary form
non fiction
http://bibfra.me/vocab/lite/meetingDate
2010
http://bibfra.me/vocab/lite/meetingName
Workshop on Theory, Modelling and Computational Methods for Semiconductors
Nature of contents
  • dictionaries
  • bibliography
Series statement
Journal of physics conference series
Series volume
v. 242
http://library.link/vocab/subjectName
Semiconductors
Label
2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors : 13-15 January, 2010, St William's College, York, UK, (electronic resource)
Instantiates
Publication
Note
  • Title from webpage of ebook (IOP, viewed Oct.4, 2010)
  • "The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in Semiconductor science and technology, where there is a substantial potential for time saving in R&D. The development of high speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational and electronic properties of semiconductors and their heterostructures." -- Preface
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Calculating strain using atomistic simulations: a review -- Tight-binding approach to calculation of localised perturbations in semiconductors -- First principles calculations of the scattering cross section of substitutional carbon in silicon -- Calculating charged defects using CRYSTAL -- DFTB+ and lanthanides -- Model of the coherent magneto-optical dynamics in a single chiral carbon nanotube -- Calculation of the few-electron states in semiconductor carbon nanotube quantum dots by exact diagonalisation -- A quantum transport model for the double-barrier nonmagnetic spin filter -- Predictive microscopic approach to transport in THz quantum cascade lasers -- From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices -- Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length -- Theoretical modelling of InGaAs quantum rods: Terahertz intraband absorption and its dependence on rod height -- Modeling of intraband absorption for quantum dot-in-well structures with low computational cost -- Controlling dopant solubility in semiconductor alloys -- Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions -- Full-band NEGF simulations of surface roughness in Si nanowires -- Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium
Control code
669060856
Extent
1 online resource
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)669060856
Label
2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors : 13-15 January, 2010, St William's College, York, UK, (electronic resource)
Publication
Note
  • Title from webpage of ebook (IOP, viewed Oct.4, 2010)
  • "The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in Semiconductor science and technology, where there is a substantial potential for time saving in R&D. The development of high speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational and electronic properties of semiconductors and their heterostructures." -- Preface
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Calculating strain using atomistic simulations: a review -- Tight-binding approach to calculation of localised perturbations in semiconductors -- First principles calculations of the scattering cross section of substitutional carbon in silicon -- Calculating charged defects using CRYSTAL -- DFTB+ and lanthanides -- Model of the coherent magneto-optical dynamics in a single chiral carbon nanotube -- Calculation of the few-electron states in semiconductor carbon nanotube quantum dots by exact diagonalisation -- A quantum transport model for the double-barrier nonmagnetic spin filter -- Predictive microscopic approach to transport in THz quantum cascade lasers -- From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices -- Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length -- Theoretical modelling of InGaAs quantum rods: Terahertz intraband absorption and its dependence on rod height -- Modeling of intraband absorption for quantum dot-in-well structures with low computational cost -- Controlling dopant solubility in semiconductor alloys -- Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions -- Full-band NEGF simulations of surface roughness in Si nanowires -- Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium
Control code
669060856
Extent
1 online resource
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)669060856

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